Although the analysis is not completely definitive, the critical‐energy‐density model may also be valid at high temperature if diffusion of the damage energy is taken into account. For high‐temperature implantations, out‐diffusion models can explain the temperature dependence of the critical dose. This model assumed that a region would become amorphous if the energy density deposited into atomic processes by the ions exceeded the critical energy density of 6×1023 eV/cm3. The critical‐energy‐density model was in good agreement with the measured critical doses. For all implants, the first ion created only predamage, while the second or third ion into the same region caused the amorphous transformation.
The transformation of silicon to the amorphous state by implanted ions was studied both experimentally and theoretically.
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